AP4405GM
14
4000
f=1.0MHz
12
I
D
= -13A
V
DS
= -24V
C
iss
3000
-V
GS
, Gate to Source Voltage (V)
10
8
C (pF)
2000
6
4
1000
2
C
oss
C
rss
0
0
20
40
60
80
100
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
10
100us
1ms
0.2
0.1
0.1
0.05
-I
D
(A)
1
10ms
100ms
0.02
0.01
P
DM
0.01
t
T
Single Pulse
0.1
1s
T
A
=25 C
Single Pulse
0.01
0.01
0.1
1
10
o
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=125
o
C/W
DC
0.001
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
-4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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