AP42T03GP
100
80
T
C
=25
o
C
80
10V
7.0V
I
D
, Drain Current (A)
6.0V
60
T
C
=150
o
C
10V
7.0V
6.0V
5.0V
I
D
, Drain Current (A)
60
5.0V
40
40
V
G
= 4. 0V
20
V
G
=4.0V
20
0
0.0
1.0
2.0
3.0
4.0
5.0
0
0.0
2.0
4.0
6.0
8.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
32
2.0
I
D
=14A
T
C
=25
℃
28
I
D
=18A
V
G
=10V
Normalized R
DS(ON)
1.4
24
R
DS(ON)
(m
Ω
)
20
16
0.8
12
8
2
4
6
8
10
0.2
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
20
16
1.2
I
S
(A)
12
T
j
=150 C
o
T
j
=25
o
C
Normalized V
GS(th)
(V)
0.8
8
0.4
4
0
0
0.4
0.8
1.2
1.6
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C )
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
