AP4230GM-HF
10
400
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
8
I
D
=7A
C (pF)
V
DS
=15V
6
300
C
iss
200
4
100
2
C
oss
C
rss
0
0
2
4
6
8
1
5
9
13
17
21
25
29
0
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
Operation in this
area limited by
R
DS(ON)
100us
I
D
(A)
1ms
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
0.2
0.1
0.1
P
DM
0.05
10ms
100ms
0.1
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 135℃/W
0.02
1s
T
A
=25 C
Single Pulse
o
0.01
DC
1
10
100
Single Pulse
0.01
0.01
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4