AP4224GM
180
140
150
T
A
= 25
o
C
10V
7.0V
I
D
, Drain Current (A)
120
T
A
= 150
o
C
10V
7.0V
I
D
, Drain Current (A)
100
120
80
90
5.0V
60
5.0V
60
4.5V
40
4.5V
30
20
V
G
= 3 .0V
V
G
= 3 .0V
0
0
1
2
3
4
5
0
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
1.8
18
I
D
=7A
T
A
=25
℃
Normalized R
DS(ON)
1.6
I
D
=1 0 A
V
G
=10V
16
1.4
R
DS(ON)
(m
Ω
)
14
1.2
12
1.0
10
0.8
8
0.6
3
5
7
9
11
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3.0
10
8
2.5
6
V
GS(th)
(V)
I
S
(A)
2.0
4
T
j
=150
o
C
T
j
=25
o
C
1.5
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
