AP4226GM
35
35
T
A
=25 C
28
o
10V
5.0V
4.0V
I
D
, Drain Current (A)
28
T
A
=150
o
C
10V
5.0V
4.0V
I
D
, Drain Current (A)
21
21
14
14
7
7
V
G
=3.0V
V
G
=3.0V
0
0
1
1
2
2
3
0
0
1
1
2
2
3
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
1.8
I
D
=6.0A
T
A
=25
℃
60
1.6
I
D
=6A
V
GS
=10V
Normalized R
DS(ON)
2
4
6
8
10
12
1.4
R
DS(ON)
(m
Ω
)
40
1.2
1
20
0.8
0
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.50
10
2.25
I
S
(A)
1
T
j
=150
o
C
T
j
=25
o
C
0.1
0
0.4
0.8
1.2
1.6
V
GS(th)
(V)
2.00
1.75
1.50
1.25
1.00
-50
0
50
100
150
V
SD
,Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
