AP4226BGM-HF
f=1.0MHz
10
1600
V
GS
, Gate to Source Voltage (V)
I
D
= 10 A
V
DS
=15V
8
1200
C
iss
6
C (pF)
800
4
400
2
C
oss
C
rss
0
0
10
20
30
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
10
Operation in this
area limited by
R
DS(ON)
100us
Normalized Thermal Response (R
thja
)
0.2
0.1
0.1
I
D
(A)
1ms
1
0.05
0.02
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 135℃/W
10ms
100ms
0.1
0.01
0.01
Single Pulse
1s
T
A
=25 C
Single Pulse
o
DC
0.01
0.01
0.1
1
10
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
60
12
V
DS
=5V
50
10
I
D
, Drain Current (A)
I
D
, Drain Current (A)
T
j
=150
o
C
o
T
j
=25 C
40
8
30
6
20
4
10
2
T
j
= -40
o
C
0
0
5
6
25
50
75
100
125
150
0
1
2
3
4
V
GS
, Gate-to-Source Voltage (V)
T
A
, Ambient Temperature ( C )
o
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
