AP4226AGM
40
40
T
A
= 25 C
30
o
I
D
, Drain Current (A)
10V
7.0 V
5.0 V
4.5 V
I
D
, Drain Current (A)
V
G
= 3.0 V
T
A
= 150
o
C
30
10V
7.0 V
5.0 V
4.5 V
V
G
= 3.0 V
20
20
10
10
0
0
1
2
3
4
5
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
1.6
I
D
=6A
T
A
=25
℃
50
I
D
=8A
V
G
=10V
Normalized R
DS(ON)
2
4
6
8
10
1.3
R
DS(ON)
(m
Ω
)
40
30
1.0
20
10
0.7
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30.0
8
6
T
j
=150 C
o
T
j
=25 C
R
DS(ON)
(mΩ)
o
I
S
(A)
4
20.0
V
GS
=4.5V
V
GS
=10V
2
0
10.0
0
0.2
0.4
0.6
0.8
1
1.2
0
10
20
30
40
V
SD
, Source-to-Drain Voltage (V)
I
D
, Drain Current (A)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. On-Resistance vs.
Drain Current
3/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
