AP4224LGM-HF
Preliminary
Advanced Power
Electronics Corp.
▼
Low On-Resistance
▼
Capable of 2.5V Gate Drive
▼
Dual N MOSFET Package
▼
RoHS Compliant & Halogen-Free
D2
D1
D1
D2
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
BV
DSS
R
DS(ON)
G2
S2
20V
14mΩ
10A
I
D
SO-8
S1
G1
Description
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, ruggedized device
design, ultra low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G1
S1
D1
D2
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
+12
10
8
30
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
62.5
Unit
℃/W
1
20110810pre
Data and specifications subject to change without notice
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
