AP40T10GP-HF
125
80
T
C
=25 C
100
o
10V
T
C
= 175 C
o
10V
7.0V
I
D
, Drain Current (A)
I
D
, Drain Current (A)
7.0V
75
60
6 .0V
40
6.0V
50
5.0 V
V
G
= 4.5 V
20
5.0V
25
V
G
=4.5V
0
0
2
4
6
8
10
12
0
0
4
8
12
16
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
50
2.8
I
D
= 10 A
T
C
=25
o
C
Normalized R
DS(ON)
2.4
I
D
=15A
V
G
=10V
R
DS(ON)
(m
Ω
)
40
2.0
1.6
30
1.2
0.8
20
2
4
6
8
10
0.4
-50
0
50
100
150
200
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
20
16
Normalized V
GS(th)
(V)
I
S
(A)
12
T
j
=175
o
C
T
j
=25
o
C
1.2
8
0.6
4
0
0
0.2
0.4
0.6
0.8
1
1.2
0.0
-50
0
50
100
150
200
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
