AP40T03H/J
f=1.0MHz
12
1000
I
D
=18A
V
GS
, Gate to Source Voltage (V)
9
C
iss
V
DS
=10V
V
DS
=15V
V
DS
=20V
C (pF)
6
100
C
oss
C
rss
3
0
0
3
6
9
12
10
1
8
15
22
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor = 0.5
Normalized Thermal Response (R
thjc
)
0.2
I
D
(A)
100us
10
0.1
0.1
0.05
0.02
0.01
Single Pulse
P
DM
1ms
T
C
=25
o
C
Single Pulse
10ms
100ms
DC
10
100
t
T
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
1
0.1
1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
