AP40P03GH/J
f=1.0MHz
12
10000
-V
GS
, Gate to Source Voltage (V)
10
V
DS
=- 24 V
I
D
=-1 8 A
8
6
C (pF)
1000
C
iss
4
2
C
oss
C
rss
0
0
5
10
15
20
25
30
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000.0
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100.0
100us
1ms
10.0
0.2
0.1
-I
D
(A)
0.1
0.05
10ms
1.0
P
DM
t
0.02
T
c
=25
o
C
Single Pulse
100ms
1s
DC
T
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.1
0.1
1
10
100
0.01
0.00001
0.0001
0.001
0.01
0.1
1
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
-4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4