AP40N03GH/J-HF
200
100
T
C
=25
o
C
160
T
C
=150 C
10V
9.0V
8.0V
7.0V
6.0V
80
o
I
D
, Drain Current (A)
120
I
D
, Drain Current (A)
60
10V
9.0V
8.0V
7.0V
6.0V
5.0V
80
5.0V
4.0V
40
4.0V
40
20
V
G
=3.0V
V
G
=3.0V
0
0.0
2.0
4.0
6.0
8.0
10.0
0
0.0
2.0
4.0
6.0
8.0
10.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
32
2.0
I
D
=18A
T
C
=25
℃
28
I
D
=18A
V
G
=10V
20
Normalized R
DS(ON)
24
1.4
R
DS(ON)
(m
Ω
)
16
0.8
12
8
2
4
6
8
10
0.2
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
100
1.8
V
GS(th)
(V)
1.6
I
S
(A)
10
o
T
j
=150 C
T
j
=25 C
o
1.4
1.2
1
0.2
0.4
0.6
0.8
1
1.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
