AP4085W
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Low On-resistance
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
500V
0.43Ω
16A
S
Description
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
G
D
S
TO-3P
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Single Pulse Avalanche Energy
2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
500
±30
16
11
64
208
159
16
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
A
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
0.6
40
Units
℃/W
℃/W
Data and specifications subject to change without notice
200704071-1/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
