AP4034GH-HF
8
2000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
I
D
=20A
V
DS
=24V
1600
6
C
iss
C (pF)
1200
4
800
2
400
0
0
8
16
24
32
0
1
5
9
13
17
21
25
C
oss
C
rss
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
100
Operation in this
area limited by
R
DS(ON)
Normalized Thermal Response (R
thjc
)
Duty factor = 0.5
0.2
I
D
(A)
100us
10
0.1
+20
0.05
0.1
1
T
C
=25
o
C
Single Pulse
0.1
0.1
1
10
1ms
10ms
100ms
DC
P
DM
t
0.02
T
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
Single Pulse
0.01
100
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
60
60
V
DS
=5V
50
50
I
D
, Drain Current (A)
40
I
D
, Drain Current (A)
T
j
=25
o
C
T
j
= -40 C
o
40
30
30
20
T
j
=150
o
C
20
10
10
0
0
1
2
3
4
5
6
0
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
C
, Case Temperature (
o
C)
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain Current
v.s. Case Temperature
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
