AP4034AGYT-HF
8
2400
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
I
D
= 12 A
V
DS
=15V
6
2000
C
iss
C (pF)
4
2
1600
1200
800
400
C
oss
C
rss
0
0
10
20
30
40
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
Operation in this area
limited by R
DS(ON)
10
0.2
100us
1ms
10ms
0.1
0.1
0.05
I
D
(A)
1
0.02
100ms
0.1
0.01
P
DM
0.01
t
T
Single Pulse
1s
T
A
=25
o
C
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thia
=160
℃/W
DC
1
10
100
0.01
0.01
0.1
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
20
V
DS
=5V
16
I
D
, Drain Current (A)
I
D
, Drain Current (A)
T
j
=150
o
C
T
j
=25
o
C
T
j
= -40
o
C
0
1
2
3
4
5
6
60
12
40
8
20
4
0
0
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
A
, Ambient Temperature ( C )
o
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
