AP3R604GH
300
160
T
C
=25 C
250
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
V
G
= 4.0 V
T
C
=150 C
o
120
10V
7.0V
6.0V
5.0V
V
G
=4.0V
200
150
80
100
40
50
0
0.0
1.0
2.0
3.0
4.0
5.0
0
0.0
1.0
2.0
3.0
4.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
4.4
2.0
I
D
=30A
T
C
=25 C
4
o
I
D
=40A
V
G
=10V
Normalized R
DS(ON)
1.6
R
DS(ON)
(m
Ω
)
3.6
1.2
3.2
0.8
2.8
2.4
2
4
6
8
10
0.4
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
40
T
j
=150
o
C
20
T
j
=25 C
o
Normalized V
GS(th)
(V)
1.2
30
1.2
I
S
(A)
0.8
10
0.4
0
0
0.4
0.8
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
