AP3990P
20
12
T
C
=25 C
16
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
6.0V
T
C
=150
o
C
10
10V
7 .0V
6 .0V
8
12
6
V
G
=5 0V
8
4
4
2
V
G
=5.0V
0
0
5
10
15
20
0
0
4
8
12
16
20
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.3
3.2
2.8
1.2
I
D
=5A
V
G
=10V
Normalized BV
DSS
(V)
Normalized R
DS(ON)
2.4
2
1.1
1.6
1
1.2
0.8
0.9
0.4
0.8
-50
0
50
100
150
0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
10
1.4
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.2
T
j
= 150
o
C
T
j
= 25
o
C
Normalized V
GS(th)
(V)
1.2
1
I
S
(A)
1
0.8
0.6
0.1
0
0.2
0.4
0.6
0.8
1
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
