AP3403GH/J
14
f=1.0MHz
1000
12
-V
GS
, Gate to Source Voltage (V)
I
D
=-10A
V
DS
=-24V
Ciss
10
8
C (pF)
100
Coss
6
4
Crss
2
0
0
2
4
6
8
10
12
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS ,
Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
DUTY=0.5
1ms
-I
D
(A)
10ms
10
0.2
0.1
0.1
0.05
P
DM
t
0.02
0.01
Single Pulse
100ms
T
c
=25 C
Single Pulse
1
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
o
DC
10
100
0.01
0.00001
1
0.0001
0.001
0.01
0.1
1
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
R
D
V
DS
D
TO THE
OSCILLOSCOPE
D
V
DS
TO THE
OSCILLOSCOPE
0.5 x RATED V
DS
0.5 x RATED V
DS
G
S
V
GS
R
G
G
S
-10 V
V
GS
-1~-3mA
I
G
I
D
Fig11. Switching Time Circuit
Fig 12. Gate Charge Circuit
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
