AP3402GEH/J
100
80
T
C
=25
o
C
80
10V
7.0V
60
T
C
=150
o
C
10V
7.0V
I
D
, Drain Current (A)
60
I
D
, Drain Current (A)
40
5.0V
40
5.0V
4.5V
4.5V
20
20
V
G
=3.0V
0
0
1
2
3
4
5
6
0
0
1
2
3
4
V
G
=3.0V
5
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
1.5
I
D
=20A
50
T
C
=25
o
C
Normalized R
DS(ON)
1.2
I
D
=25A
V
G
=10V
R
DS(ON)
(m
Ω
)
40
30
0.9
20
10
0.6
2
4
6
8
10
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
20
15
1.2
T
j
=150
o
C
I
S
(A)
10
T
j
=25
o
C
Normalized V
GS(th)
(V)
1.4
0.9
5
0.6
0
0
0.2
0.4
0.6
0.8
1
1.2
0.3
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
