AP30T10GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower Gate Charge
▼
Fast Switching Characteristic
▼
Halogen Free & RoHS Compliant
D
D
D
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
S
G
100V
55mΩ
4.5A
D
I
D
SO-8
S
S
Description
AP30T10 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current , V
GS
@ 10V
3
Continuous Drain Current , V
GS
@ 10V
3
Rating
100
+20
4.5
3.6
20
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
50
Units
℃/W
1
201304251
Data and specifications subject to change without notice