AP30P10GH-HF
f=1.0MHz
12
4000
-V
GS
, Gate to Source Voltage (V)
10
V
DS
= - 80 V
I
D
= - 18 A
3000
8
C
iss
C (pF)
6
2000
4
1000
2
0
0
10
20
30
40
50
60
0
1
5
9
13
17
21
25
C
oss
C
rss
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
100us
10
Normalized Thermal Response (R
thjc
)
Operation in this area
limited by R
DS(ON)
Duty factor=0.5
0.2
-I
D
(A)
1ms
10ms
100ms
DC
T
c
=25 C
Single Pulse
0
0.1
1
10
100
1000
0.1
0.1
0.05
P
DM
0.02
1
t
T
0.01
o
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
-10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4