AP30G120W
1000
1
V
GE
=15V
T
C
=125
o
C
I
C
, Peak Collector Current(A)
100
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
0.1
0.1
0.05
P
DM
0.02
10
t
T
0.01
Safe Operating Area
1
1
10
100
1000
10000
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
CE ,
Collector-Emitter Voltage(V)
t , Pulse Width (s)
Fig 7. Turn-off SOA
Fig 8. Effective Transient Thermal
Impedance
20
20
T
C
=25 C
V
CE
, Collector-Emitter Voltage(V)
15
o
10
V
CE
, Collector-Emitter Voltage(V)
I
C
= 60 A
30 A
15 A
T
C
=150 C
15
o
I
C
= 60 A
30 A
15 A
10
5
5
0
0
4
8
12
16
20
0
0
4
8
12
16
20
V
GE
, Gate-Emitter Voltage(V)
V
GE
, Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. V
GE
Fig 10. Saturation Voltage vs. V
GE
250
20
200
V
GE
, Gate -Emitter Voltage (V)
16
Power Dissipation (W)
I
C
= 3 0A
V
CC
=200V
V
CC
=300V
V
CC
=500V
150
12
100
8
50
4
0
0
50
100
150
200
0
0
20
40
60
80
Junction Temperature (
℃
)
Q
G
, Gate Charge (nC)
Fig11. Power Dissipation vs. Junction
Temperature
Fig 12. Gate Charge Characterisitics
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