AP30G120ASW
RoHS-compliant Product
Advanced Power
Electronics Corp.
Features
▼
High Speed Switching
▼
Low Saturation Voltage
V
CE(sat)
=2.9V@I
C
=30A
▼
CO-PAK, IGBT With FRD
▼
RoHS Compliant
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR WITH FRD.
V
CES
I
C
C
G
C
E
TO-3P
G
E
Parameter
Rating
1200
+30
60
30
120
6
40
208
-55 to 150
-55 to 150
300
1200V
30A
Absolute Maximum Ratings
Symbol
V
CES
V
GE
I
C
@T
C
=25℃
I
C
@T
C
=100℃
I
CM
I
F
@T
C
=100℃
I
FM
P
D
@T
C
=25℃
T
STG
T
J
T
L
Gate-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
1
Units
V
V
A
A
A
A
A
W
℃
℃
℃
Collector-Emitter Voltage
Diode Continunous Forward Current
Diode Pulse Forward Current
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 5 seconds .
Notes:
1.Pulse width limited by max . junction temperature .
Thermal Data
Symbol
Rthj-c(IGBT)
Rthj-a
Parameter
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Value
0.6
2
40
Units
℃/W
℃/W
℃/W
Rthj-c(Diode) Thermal Resistance Junction-Case
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
I
GES
I
CES
V
CE(sat)
V
GE(th)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
V
F
V
F
t
rr
Q
rr
Parameter
Gate-to-Emitter Leakage Current
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Voltage
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GE
=0V
V
CE
=30V
f=1.0MHz
I
F
=6A
I
F
=20A
I
F
=10A
di/dt = 100 A/µs
Test Conditions
V
GE
=+30V, V
CE
=0V
V
CE
=1200V, V
GE
=0V
V
GE
=15V, I
C
=30A
V
GE
=15V, I
C
=60A
V
CE
=V
GE
, I
C
=250uA
I
C
=30A
V
CC
=500V
V
GE
=15V
V
CC
=600V,
I
c
=30A,
V
GE
=15V,
R
G
=5Ω,
Inductive Load
Min.
-
-
-
-
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
2.9
3.7
-
63
12
32
40
45
125
430
1.3
3.1
1400
120
15
2.6
-
54
138
Max. Units
+500
nA
1
3.6
-
7
100
-
-
-
-
-
860
-
-
2240
-
-
3
4
-
-
mA
V
V
V
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
pF
pF
pF
V
V
ns
nC
Electrical Characteristics of Diode@T
j
=25℃(unless otherwise specified)
Data and specifications subject to change without notice
1
201107182
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
