欢迎访问ic37.com |
会员登录 免费注册
发布采购

AP2RA04GMT-HF 参数 Datasheet PDF下载

AP2RA04GMT-HF图片预览
型号: AP2RA04GMT-HF
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 100 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
 浏览型号AP2RA04GMT-HF的Datasheet PDF文件第2页浏览型号AP2RA04GMT-HF的Datasheet PDF文件第3页浏览型号AP2RA04GMT-HF的Datasheet PDF文件第4页  
AP2RA04GMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Simple Drive Requirement
SO-8 Compatible with Heatsink
Low On-resistance
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
40V
2.9mΩ
130A
D
S
D
D
D
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The PMPAK 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink and
lower profile.
®
S
S
S
G
PMPAK
®
5x6
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
E
AS
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip), V
GS
@ 10V
Continuous Drain Current , V
GS
@ 10V
Continuous Drain Current
3
, V
GS
@ 10V
Pulsed Drain Current
1
3
Rating
40
+20
130
32.5
26
250
83.3
5
28.8
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W
mJ
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy
4
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
3
Value
1.5
25
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
201106201