AP2R803AGMT-HF
10
4000
f=1.0MHz
I
D
=20A
V
DS
=15V
V
GS
, Gate to Source Voltage (V)
8
3000
C
iss
C (pF)
6
2000
4
1000
2
C
oss
C
rss
0
0
10
20
30
40
50
60
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor = 0.5
100
Operation in this
area limited by
R
DS(ON)
Normalized Thermal Response (R
thjc
)
0.2
I
D
(A)
100us
0.1
0.1
0.05
10
1ms
10ms
100ms
DC
1
10
100
P
DM
0.02
t
T
0.01
T
C
=25 C
Single Pulse
1
0.01
0.1
o
Single Pulse
Duty factor = t/T
Peak T
j
= PDM x R
thjc
+ T
c
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
160
V
DS
=5V
V
G
Q
G
4.5V
120
I
D
, Drain Current (A)
80
Q
GS
Q
GD
40
T
j
=150
o
C
o
T
j
=25 C
T
j
=-40
o
C
0
0
1
2
3
4
5
Charge
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
