AP2N7002K
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
60
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.06
-
-
-
600
-
-
-
1
0.5
0.5
12
10
56
29
32
8
6
Max. Units
-
-
2
4
2.5
-
10
100
±30
1.6
-
-
-
-
-
-
50
-
-
V
V/℃
Ω
Ω
V
mS
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=500mA
V
GS
=4.5V, I
D
=200mA
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=600mA
V
DS
=60V, V
GS
=0V
V
DS
=48V ,V
GS
=0V
V
GS
=±20V
I
D
=600mA
V
DS
=50V
V
GS
=4.5V
V
DS
=30V
I
D
=600mA
R
G
=3.3Ω,V
GS
=10V
R
D
=52Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Test Conditions
I
S
=1.2A, V
GS
=0V
Min.
-
Typ.
-
Max. Units
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
2/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
