AP28G45GEM
240
140
200
T
A
=25
o
C
5.0V
4.0V
I
C
, Collector Current (A)
120
T
A
= 150 C
o
5.0V
4.0V
3.3 V
I
C
, Collector Current (A)
100
160
3.3V
120
80
60
2.0V
80
2.0V
40
40
V
G
=1.0V
20
V
G
=1.0V
0
0
0
2
4
6
8
10
12
0
1
2
3
4
5
6
7
V
CE
, Collector-Emitter Voltage (V)
V
CE
, Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
240
9
200
V
CE
=6.0V
o
25 C
o
70 C
o
125 C
o
T
A
=150 C
V
GE
=4.0V
V
CE(sat)
,Saturation Voltage(V)
7
I
C
, Collector Current(A)
I
C
=130A
160
I
C
=120A
5
120
I
C
=100A
80
3
I
C
=50A
40
0
1
0
1
2
3
4
5
6
0
20
40
60
80
100
120
140
160
V
GE
, Gate-Emitter Voltage (V)
Junction Temperature ( C)
o
Fig 3. Collector Current v.s.
Gate-Emitter Voltage
1.2
Fig 4. Collector- Emitter Saturation Voltage
v.s. Junction Temperature
10
V
GE(th)
,Gate Threshold Voltage (V)
1.0
V
CE
,Collector-Emitter Voltage(V)
o
T
A
=25 C
8
0.8
6
I
C
= 130 A
120A
100A
50A
0.6
4
0.4
2
0.2
0.0
-50
0
50
100
150
0
0
1
2
3
4
5
6
Junction Temperature (
o
C )
V
GE
, Gate-Emitter Voltage(V)
Fig 5. Gate Threshold Voltage
v.s. Junction Temperature
Fig 6. Collector Current v.s.
Gate-Emitter Voltage
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
