AP28G40GEO
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
High Input Impedance
▼
High Peak Current Capability
C
C
C
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
V
CE
I
CP
G
C
400V
150A
C
G
E
▼
Low Gate Drive
▼
Strobe Flash Applications
TSSOP-8
E
E
E
Absolute Maximum Ratings
Symbol
V
CE
V
GEP
I
CP
P
D
@T
A
=25℃
1
T
STG
T
J
Parameter
Collector-Emitter Voltage
Peak Gate-Emitter Voltage
Pulsed Collector Current, V
GE
@ 2.5V
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
400
±6
150
1
-55 to 150
150
Units
V
V
A
W
℃
℃
o
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
I
GES
I
CES
V
CE(sat)
V
GE(th)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
Rth
JA1
Parameter
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Test Conditions
V
GE
=± 6V, V
CE
=0V
V
GE
=2.5V, I
CP
=150A (Pulsed)
Min.
-
-
-
0.3
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
5.2
-
76
4
26
220
800
1.6
1.5
4485
44
40
-
Max.
±10
10
9
1.2
130
-
-
-
-
-
-
8240
-
-
125
Units
uA
uA
V
V
nC
nC
nC
ns
ns
µs
µs
pF
pF
pF
℃/W
Collector-Emitter Leakage Current V
CE
=400V, V
GE
=0V
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
=V
GE
, I
C
=250uA
I
C
=40A
V
CE
=200V
V
GE
=4V
V
CC
=320V
I
C
=160A
R
G
=10Ω
V
GE
=4V
V
GE
=0V
V
CE
=30V
f=1.0MHz
Thermal Resistance Junction-Ambient
Notes:
1.Surface mounted on 1 in copper pad of FR4 board, t=10s.
Data and specifications subject to change without notice
2
1
200805306
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
