AP2761R-A
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
o
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=1mA
Min.
650
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.6
-
-
4.5
-
-
-
53
10
15
16
20
82
36
320
8
Max. Units
-
-
1
4
-
10
100
±100
85
-
-
-
-
-
-
-
-
V
V/℃
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
V
GS
=10V, I
D
=3.5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=3.5A
V
DS
=600V, V
GS
=0V
V
DS
=480V
,
V
GS
=0V
V
GS
=±30V
I
D
=10A
V
DS
=520V
V
GS
=10V
V
DD
=320V
I
D
=10A
R
G
=10Ω,V
GS
=10V
R
D
=32Ω
V
GS
=0V
V
DS
=15V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2770 4430
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Notes:
1.Pulse width limited by safe operating area.
o
2.Starting T
j
=25 C , V
DD
=50V , L=1.2mH , R
G
=25Ω , I
AS
=10A.
Parameter
Forward On Voltage
3
3
Test Conditions
I
S
=10A, V
GS
=0V
I
S
=10A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
610
8.64
Max. Units
1.5
-
-
V
ns
µC
Reverse Recovery Time
Reverse Recovery Charge
3.Pulse width <300us , duty cycle <2%.
2/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
