AP2764AI
14
8
T
C
=25 C
12
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
6.0V
T
C
=150
o
C
6
10V
5.0V
10
8
4.5V
4
6
5.0V
4
2
V
G
=4.0V
2
V
G
=4.0V
0
0
5
10
15
20
25
0
5
10
15
20
25
0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
I
D
=4A
V
G
=10V
Normalized BV
DSS
(V)
1.1
Normalized R
DS(ON)
-50
0
50
100
150
2
1
1
0.9
0.8
0
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
100
3.2
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.8
10
V
GS(th)
(V)
I
S
(A)
T
j
= 150
o
C
1
T
j
= 25
o
C
2.4
2
0.1
1.6
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.2
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
