AP2763I-A
5.0
5.00
T
C
=25 C
4.0
o
10V
7.0V
5.0V
I
D
, Drain Current (A)
T
C
=150
o
C
4.00
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
3.0
3.00
4.5V
2.0
2.00
V
G
=4.0V
1.0
1.00
V
G
=4.0V
0.0
0.00
0
2
4
6
8
10
0
4
8
12
16
20
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3.0
2.5
I
D
= 4.0 A
V
G
=10V
Normalized BV
DSS
(V)
1.1
Normalized R
DS(ON)
2.0
1.0
1.5
1.0
0.9
0.5
25
-50
0
50
100
150
0.8
-50
0
50
100
150
0.0
Junction Temperature ( C)
o
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
10.0
1.6
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8.0
Normalized V
GS(th)
(V)
6.0
T
j
=150 C
o
T
j
=25 C
o
1.2
I
S
(A)
4.0
0.8
2.0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
