AP2762R-A
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
3
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
3
Test Conditions
V
GS
=0V, I
D
=1mA
V
GS
=10V, I
D
=3A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=4A
V
DS
=480V, V
GS
=0V
V
GS
=±30V
I
D
=6A
V
DS
=200V
V
GS
=10V
V
DD
=200V
I
D
=3A
R
G
=50Ω,V
GS
=10V
R
D
=67Ω
V
GS
=0V
V
DS
=30V
f=1.0MHz
Min.
650
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
3.5
-
-
31
7
13
33
29
186
46
100
8
Max. Units
-
1.4
4
-
100
±100
50
-
-
-
-
-
-
-
-
V
Ω
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3
1330 2130
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
3
Test Conditions
I
S
=6A, V
GS
=0V
I
S
=6A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
475
6.4
Max. Units
1.5
-
-
V
ns
uC
t
rr
Q
rr
Notes:
Reverse Recovery Time
3
Reverse Recovery Charge
1.Pulse width limited by Max. junction temperature.
2.Starting T
j
=25 C , V
DD
=50V , L=1mH , R
G
=25Ω
3.Pulse test
o
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
