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AP26G40GEO-HF 参数 Datasheet PDF下载

AP26G40GEO-HF图片预览
型号: AP26G40GEO-HF
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道绝缘栅双极晶体管 [N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR]
分类和应用: 晶体晶体管光电二极管双极性晶体管
文件页数/大小: 3 页 / 61 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
 浏览型号AP26G40GEO-HF的Datasheet PDF文件第1页浏览型号AP26G40GEO-HF的Datasheet PDF文件第3页  
AP26G40GEO-HF
150
120
T
A
=25 C
120
o
I
C
, Collector Current (A)
I
C
, Collector Current (A)
5.0V
4.0V
3.0V
V
G
=2.5V
T
A
= 150
o
C
100
5.0V
4.0V
3.0V
V
G
= 2.5V
80
90
60
60
40
30
20
0
0
0
2
4
6
8
0
2
4
6
8
V
CE
, Collector-Emitter Voltage (V)
V
CE
, Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
160
6
V
GE
= 3 .0V
V
CE(sat)
,Saturation Voltage(V)
T
A
=25
o
C
I
C
, Collector Current(A)
120
5
V
GE
=3.0V
o
T
A
=150 C
4
80
I
C
=100A
3
I
C
=60A
2
40
I
C
=20A
0
1
0
1
2
3
4
5
6
0
20
40
60
80
100
120
140
160
V
CE
, Collector-Emitter Voltage (V)
T
C
, Case Temperature (
o
C)
Fig 3. Typical Saturation Voltage
Characteristics
10
Fig 4. Collector- Emitter Saturation Voltage
v.s. Junction Temperature
10
T
A
=25 C
V
CE
,Collector-Emitter Voltage(V)
8
o
T
A
=150
o
C
V
CE
,Collector-Emitter Voltage(V)
8
6
6
4
I
C
= 120A
I
C
=80A
4
I
C
=80A
2
2
I
C
=40A
I
C
=60A
I
C
=40A
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
V
GE
, Gate-Emitter Voltage(V)
V
GE
, Gate-Emitter Voltage(V)
Fig 5. Collector Current v.s.
Gate-Emitter Voltage
Fig 6. Collector Current v.s.
Gate-Emitter Voltage
2