AP2622GY
1.0
1.0
T
A
=25 C
0.8
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
T
A
= 150 C
0.8
o
10V
7.0V
5.0V
4.5V
0.6
0.6
0.4
0.4
V
G
= 3.0 V
0.2
V
G
= 3.0 V
0.2
0.0
0.0
2.0
4.0
6.0
0.0
0
2
4
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
2.0
I
D
= 200m A
2.5
T
A
=25 C
Normalized R
DS(ON)
1.5
o
I
D
= 500m A
V
G
=10V
R
DS(ON)
(m
Ω
)
2.0
1.0
1.5
1.0
2
4
6
8
10
0.5
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
0.6
Normalized V
GS(th)
(V)
0.4
1.1
I
S
(A)
T
j
=150
o
C
T
j
=25
o
C
0.2
0.7
0
0
0.4
0.8
1.2
1.6
0.3
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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