AP2626GY
15
1000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
I
D
=3A
12
9
C (pF)
V
DS
= 15 V
V
DS
= 20 V
V
DS
= 25 V
C
iss
100
6
C
oss
C
rss
3
0
0
2
4
6
8
10
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
10
100us
I
D
(A)
1
0.2
1ms
10ms
0.1
0.1
0.05
P
DM
t
0.02
0.1
T
A
=25 C
Single Pulse
o
100ms
1s
DC
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=180
o
C/W
0.01
Single Pulse
0.01
0.1
1
10
100
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
12
V
DS
=5V
9
V
G
Q
G
T
j
=25
o
C
T
j
=150
o
C
I
D
, Drain Current (A)
4.5V
Q
GS
Q
GD
6
3
Charge
0
Q
0
1
2
3
4
5
6
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
