AP2625GY
20
15
T
A
= 25 C
o
-I
D
, Drain Current (A)
15
-I
D
, Drain Current (A)
- 10 V
-7.0V
-5.0V
-4.5V
T
A
= 150
o
C
12
- 10 V
-7.0V
-5.0V
-4.5V
9
10
V
G
=- 2.5 V
5
6
V
G
=- 2.5 V
3
0
0
1
2
3
4
5
6
7
0
0
1
2
3
4
5
6
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
220
1.6
I
D
=-1A
200
T
A
=25
o
C
I
D
=- 1.6 A
V
G
= -4.5 V
1.4
R
DS(ON)
(m
Ω
)
180
Normalized R
DS(ON)
1.2
160
1.0
140
0.8
120
0.6
0
2
4
6
8
10
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
2.4
2.0
1.4
1.6
Normalized -V
GS(th)
(V)
-I
S
(A)
1.2
T
j
=150
o
C
1.0
T
j
=25
o
C
0.8
0.6
0.4
0.0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.2
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
