AP2622GY-HF
f=1.0MHz
12
100
V
GS
, Gate to Source Voltage (V)
10
I
D
= 500m A
C
iss
V
DS
= 25 V
V
DS
=30V
V
DS
=40V
8
6
C (pF)
10
C
oss
C
rss
4
2
0
0
0.5
1
1.5
2
1
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10.00
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
1.00
0.2
I
D
(A)
100us
1ms
0.10
0.1
0.1
0.05
P
DM
t
T
0.02
10ms
0.01
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=250℃/W
Single Pulse
T
A
=25
o
C
Single Pulse
0.01
0.1
1
10
100ms
1s
DC
100
1000
0.01
0.0001
0.001
0.01
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
1.0
V
DS
=5V
0.8
V
G
Q
G
4.5V
Q
GS
Q
GD
I
D
, Drain Current (A)
T
j
=25
o
C
0.6
T
j
=150
o
C
0.4
0.2
Charge
0.0
Q
0
2
4
6
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
