AP2614GY-HF
30
30
T
A
=25
o
C
I
D
, Drain Current (A)
I
D
, Drain Current (A)
20
5.0V
4.5V
3.5V
2.5V
V
G
=2.0V
T
A
=150
o
C
20
5.0V
4.5V
3.5V
2.5V
V
G
=2.0V
10
10
0
0
1
2
3
4
5
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
56
1.8
I
D
= 2.5A
T
A
=25
o
C
Normalized R
DS(ON)
1
2
3
4
5
46
I
D
=5A
V
G
=4.5V
R
DS(ON)
(m
Ω
)
1.4
36
1.0
26
16
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
8
I
D
=250uA
6
1.2
4
Normalized V
GS(th)
T
j
=150
o
C
T
j
=25
o
C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
I
S
(A)
0.8
2
0.4
0
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
