AP2613GYT-HF
6
6000
f=1.0MHz
I
D
= -10 A
5
V
DS
= -10 V
5000
-V
GS
, Gate to Source Voltage (V)
C
iss
C (pF)
4
4000
3
3000
2
2000
1
1000
C
oss
C
rss
1
5
9
13
17
21
25
0
0
20
40
60
80
0
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Operation in this area
limited by R
DS(ON)
10
Normalized Thermal Response (R
thja
)
100us
1ms
10ms
0.2
0.1
0.1
-I
D
(A)
0.05
1
0.02
100ms
0.1
0.01
P
DM
0.01
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thia
=210
℃/W
1s
T
A
=25
o
C
Single Pulse
DC
Single Pulse
0.01
0.01
0.1
1
10
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
16
V
DS
= -5V
40
-I
D
, Drain Current (A)
-I
D
, Drain Current (A)
12
30
8
T
j
=150 C
20
o
o
T
j
=25 C
10
4
T
j
= -40
o
C
0
0
2
2.5
3
25
50
75
100
125
150
0
0.5
1
1.5
-V
GS
, Gate-to-Source Voltage (V)
T
A
, Ambient Temperature ( C )
o
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
