AP2612GY-HF
8
f=1.0MHz
800
V
GS
, Gate to Source Voltage (V)
I
D
=5A
V
DS
=15V
6
600
C (pF)
C
iss
400
4
2
200
C
oss
C
rss
0
0
0
4
8
12
16
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
0.2
10
Operation in this area
limited by R
DS(ON)
100us
1ms
0.1
0.1
I
D
(A)
0.05
1
10ms
100ms
P
DM
t
0.01
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 156℃/W
0.01
Single Pulse
0.1
1s
o
T
A
=25 C
Single Pulse
DC
1
10
100
0.01
0.01
0.1
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
V
DS
=5V
V
G
Q
G
I
D
, Drain Current (A)
20
4.5V
Q
GS
10
Q
GD
T
j
=150 C
o
T
j
=25 C
0
0
1
o
T
j
= -40
o
C
2
3
4
5
Charge
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
