AP2610GY-HF
20
16
T
A
=25
o
C
16
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
V
G
=4.0V
T
A
=150
o
C
12
10V
7.0V
6.0V
5.0V
V
G
=4.0V
12
8
8
4
4
0
0
2
4
6
8
10
0
0
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.4
I
D
=2A
T
A
=25
o
C
R
DS(ON)
(m
Ω
)
90
2.0
I
D
=3A
V
G
=10V
Normalized R
DS(ON)
1.6
80
1.2
70
0.8
60
2
4
6
8
10
0.4
-50
0
50
100
150
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
8
1.3
6
Normalized V
GS(th)
(V)
1.4
1.1
I
S
(A)
4
T
j
=150
o
C
T
j
=25
o
C
0.9
0.7
2
0.5
0
0.3
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Normalized Gate Threshold
Voltage v.s. Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
