AP2602GY
80
50
T
A
=25 C
60
o
5.0V
4.5V
4.0V
I
D
, Drain Current (A)
T
A
=150
o
C
40
5.0V
4.5V
30
I
D
, Drain Current (A)
V
G
=2.5V
40
4.0V
20
20
V
G
=2.5V
10
0
0
1
2
3
4
5
6
7
0
0
1
2
3
4
5
6
7
8
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
1.8
I
D
= 1.0 A
T
A
=25
o
C
80
I
D
=5.3A
V
G
=4.5V
Normalized R
DS(ON)
1.4
R
DS(ON)
(m
Ω
)
60
1.0
40
20
1
4
7
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
10
1
1
I
S
(A)
T
j
=150 C
o
T
j
=25 C
o
V
GS(th)
(V)
0.6
0.2
-50
0.1
0.01
0
0.4
0.8
1.2
1.6
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
