AP2604Y
40
35
35
T
A
=25
o
C
10V
7.0V
I
D
, Drain Current (A)
30
T
A
=150
o
C
10V
7.0V
5.0V
4.5V
30
25
I
D
, Drain Current (A)
25
5.0V
20
20
4.5V
15
15
10
10
5
V
G
=3.0V
5
V
G
=3.0V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
75
1.8
I
D
= 2.4 A
65
1.6
T
A
=25
o
C
Normalized R
DS(ON)
1.4
I
D
=4.8A
V
G
=10V
R
DS(ON)
(m
Ω
)
55
1.2
45
1.0
35
0.8
25
3
5
7
9
11
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
5
1.6
4
1.4
V
GS(th)
(V)
1.4
3
I
S
(A)
T
j
=150
o
C
2
T
j
=25
o
C
1.2
1
1
0.8
0
0.6
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
