AP2608AGY-HF
2.8
2
T
A
=25 C
2.4
o
I
D
, Drain Current (A)
2
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
V
G
=4.0V
T
A
=150 C
1.6
o
10V
7.0V
6.0V
5.0V
V
G
=4.0V
1.2
1.6
1.2
0.8
0.8
0.4
0.4
0
0
2
4
6
8
10
0
0
4
8
12
16
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.4
I
D
=1mA
2.0
I
D
=0.5A
V
G
=10V
Normalized R
DS(ON)
Normalized BV
DSS
(V)
1.1
1.6
1
1.2
0.9
0.8
0.8
-50
0
50
100
150
0.4
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C)
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
2
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
I
D
=250uA
1.6
1.2
I
S
(A)
1.2
T
j
=150 C
0.8
o
T
j
=25 C
o
Normalized V
GS(th)
(V)
1.4
0.8
0.4
0.4
0
0
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Normalized Gate Threshold
Voltage v.s. Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
