AP2605GY-HF
45
40
40
T
A
=25
o
C
- 10 V
-7.0V
-I
D
, Drain Current (A)
35
T
A
= 150
o
C
35
- 10 V
-7.0V
-I
D
, Drain Current (A)
30
30
25
25
-5.0V
-4.5V
20
20
-5.0V
-4.5V
15
15
10
10
V
G
=-3.0V
5
V
G
=-3.0V
5
0
0
1
2
3
4
5
6
7
8
9
0
0
1
2
3
4
5
6
7
8
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
105
1.6
95
85
Normalized R
DS(ON)
I
D
= -3.0
I
D
=-4.2AA
T =25
o
C
T
AA
=25
o
C
1.4
I
D
= -4.0A
V
G
=
-10V
R
DS(ON)
(m
Ω
)
1.2
75
1.0
65
0.8
55
3
5
7
9
11
0.6
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
4
3
2
2
T
j
=150
o
C
T
j
=25
o
C
-V
GS(th)
(V)
1.4
-I
S
(A)
1.5
1
1
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
