AP2603GY-HF
8
1000
f=1.0MHz
-V
GS
, Gate to Source Voltage (V)
I
D
= -4.2A
V
DS
= -16V
6
800
C
iss
65mΩ
4
C (pF)
600
400
2
200
C
oss
C
rss
0
0
4
8
12
16
20
0
1
5
9
13
17
21
25
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
10
Operation in this
area limited by
R
DS(ON)
100us
1ms
Normalized Thermal Response (R
thja
)
0.2
0.1
0.1
-I
D
(A)
0.05
1
10ms
100ms
P
DM
t
0.01
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
0.01
Single Pulse
0.1
1s
T
A
=25
o
C
Single Pulse
DC
R
thja
= 156℃/W
0.01
0.01
0.1
1
10
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
V
DS
= -5V
16
V
G
Q
G
-I
D
, Drain Current (A)
12
-4.5V
Q
GS
Q
GD
8
4
T
j
=150 C
0
o
T
j
=25
o
C
T
j
= -40
o
C
2
3
4
Charge
Q
0
1
-V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
