AP25N10GH/J-HF
f=1.0MHz
14
10000
I
D
= 16 A
12
V
GS
, Gate to Source Voltage (V)
10
V
DS
= 64 V
V
DS
= 80 V
V
DS
= 100 V
C (pF)
1000
C
iss
C
oss
8
100
6
4
10
C
rss
2
0
0
4
8
12
16
20
24
1
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
100us
10
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
1ms
I
D
(A)
10ms
100ms
1s
DC
T
C
=25 C
Single Pulse
0.1
0.1
1
10
100
1000
0.1
0.1
0.05
P
DM
0.02
1
t
T
0.01
o
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
25
V
DS
=5V
20
T
j
=25 C
o
T
j
=150 C
o
V
G
Q
G
10V
I
D
, Drain Current (A)
15
Q
GS
10
Q
GD
5
Charge
0
Q
0
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
