AP2535GEY-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Capable of 1.8V Gate Drive
▼
Lower Gate Charge
▼
Fast Switching Performance
▼
RoHS Compliant & Halogen-Free
S2
D1
D2
S1
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
G2
20V
32mΩ
4.6A
-20V
80mΩ
-3.1A
I
D
P-CH BV
DSS
R
DS(ON)
I
D
SOT-26
G1
Description
AP2535 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SOT-26 package is widely used for commercial surface mount
applications.
D1
G1
G2
D2
S1
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
20
+8
4.6
3.7
12
1.13
-55 to 150
-55 to 150
Rating
N-channel
P-channel
-20
+8
-3.1
-2.5
-12
V
V
A
A
A
W
℃
℃
Units
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
110
Unit
℃/W
Data and specifications subject to change without notice
1
201206281
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
