AP2533GY-HF
N-Channel
8
500
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
I
D
=2A
V
DS
= 10 V
400
6
C (pF)
C
iss
300
4
200
2
100
C
oss
C
rss
1
5
9
13
17
21
0
0
2
4
6
8
10
12
0
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Operation in this area
limited by R
DS(ON)
Normalized Thermal Response (R
thja
)
100us
1ms
1
Duty factor=0.5
0.2
0.1
0.1
I
D
(A)
10ms
0.05
0.02
0.01
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 180℃/W
100ms
0.1
0.01
Single Pulse
o
T
A
=25 C
Single Pulse
1s
DC
0.01
0.1
1
10
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
