AP2332GN-HF
12
20
f=1.0MHz
I
D
=0.1A
V
GS
, Gate to Source Voltage (V)
10
V
DS
=200V
16
8
C (pF)
12
C
iss
C
oss
6
8
4
C
rss
4
2
0
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
0.1
Operation in this area
limited by R
DS(ON)
1ms
10ms
0.2
I
D
(A)
0.1
0.01
0.1
P
DM
t
0.05
100ms
1s
DC
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 250℃/W
0.001
0.02
T
A
=25
o
C
Single Pulse
0.0001
0.01
Single Pulse
0.01
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Circuit
4
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